smbta 42m semiconductor group jun-18-1997 1 npn silicon high-voltage transistor high breakdown voltage low collector-emitter saturation voltage complementary type: smbta 92m (pnp) vpw05980 1 2 3 5 4 type marking ordering code package pin configuration 4=n.c. 5 = c s1d smbta 42m 1 = b 2 = c 3 = e sct-595 q62702-a1243 maximum ratings parameter symbol unit value v v ceo 300 collector-emitter voltage collector-base voltage v cbo 300 6 emitter-base voltage v ebo ma dc collector current 500 i c 100 base current i b total power dissipation, t s 83 c p tot w 1.5 150 c junction temperature t j storage temperature t stg - 65...+150 thermal resistance junction ambient 1) r thja 100 k/w junction - soldering point r thjs 45 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu semiconductor group 1 1998-11-01
smbta 42m semiconductor group jun-18-1997 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values typ. max. min. dc characteristics v (br)ceo 300 collector-emitter breakdown voltage i c = 100 a, i b = 0 - v - v (br)cbo 300 collector-base breakdown voltage i c = 10 a, i b = 0 - - v (br)ebo 6 - emitter-base breakdown voltage i e = 10 a, i c = 0 - i cbo - 100 collector cutoff current v cb = 200 v, i e = 0 na - i cbo - - collector-base cutoff current v cb = 200 v, t a = 150 c 20 a - - 100 i ebo emitter cutoff current v eb = 3 v, i c = 0 na dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v h fe 25 40 40 - - - - - - - collector-emitter saturation voltage1) i c = 20 ma, i b = 2 ma v cesat - - 0.5 v base-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat - - 0.9 ac characteristics - - transition frequency i c = 10 ma, v ce = 20 v, f = 100 mhz f t mhz 50 - collector-base capacitance v cb = 20 v, f = 1 mhz c cb 3 pf - 1) pulse test: t < 300 m s; d < 2% semiconductor group 2 1998-11-01
smbta 42m semiconductor group jun-18-1997 3 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 s 150 t p 0 200 400 600 800 1000 1200 1400 mw 1800 p tot t s t a dc current gain h fe = f ( i c ) v ce = 10v ehp00844 smbta 42/43 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 i 5 10 2 555 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 semiconductor group 3 1998-11-01
smbta 42m semiconductor group jun-18-1997 4 collector cutoff current i cbo = f ( t a ) v cb = 160v ehp00842 smbta 42/43 10 0 c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 i t max typ 5 10 3 collector current i c = f ( v be ) v ce = 10 v ehp00843 smbta 42/43 10 0 v be 1.5 ma c 10 3 1 10 -1 5 0.5 1.0 10 0 5 i v 5 10 2 semiconductor group 4 1998-11-01
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